KAWASAKI, Japan, November 12, 2024--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for ...

CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor ...

Cree, Inc. and Delta Energy Systems announce a breakthrough in the photovoltaic (PV) inverter industry with the release of Delta's new generation of solar inverters, which utilize SiC power MOSFETs ...

SemiQ Inc. has unveiled its compact QSiC 1200-V SiC MOSFET modules in full-bridge configurations, the latest addition to its QSiC family. These modules deliver near zero switching loss, providing ...

Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products. Japanese ...

SiC MOSFETs in solar and energy storage applications have clear benefits compared to silicon technologies, addressing the pressing need for energy and cost savings ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

Alpha and Omega Semiconductor Limited (AOS) announced new AlphaMOS ( MOS) solutions that are optimized for emerging DC to AC power inverter applications. Alpha and Omega Semiconductor Limited (AOS) ...

An impressive peak efficiency of 99.1% is claimed for 50kW a solar inverter made with silicon carbide (SiC) mosfets and diodes from Cree, which claims it is “one-fifth the average size and weight of ...

Introduction: Power MOSFETs are critical components in high voltage switching in AC/DC and DC/DC converters and DC/AC inverters. Below is the brief selection guide to select Power MOSFETs for your ...