IEEE

An All-GaN Semiconducting-Gate HEMT for Inherent Gate-Level High-Voltage Protection and Synchronous Switching with Photoelectrically Enhanced Conductivity

Abstract: We demonstrate a normally-off n-GaN/p-GaN/Al-GaN/GaN HEMT featuring a semiconducting gate (SG), i.e., an n-GaN layer overlaying the 2DEG channel as an ...
IEEE

Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC

Abstract: We discuss recent advancements in the development of vertical GaN devices, and the related reliability challenges. Key results indicate that: (i) vertical GaN devices can show high ...
IEEE

GaN Chiplet Technology Based on 300mm GaN-on-Silicon

Abstract: We demonstrate for the first time a GaN chiplet technology based on 300mm GaN-on-silicon process. This GaN chiplet technology features: (a) industry’s thinnest GaN chiplet with an underlying ...